any changing of specification will not be informed individual BAT54H 30 volt silicon hot-carrier detector surface mount schottky barrier diode maximum r a ting s (t j = 125 c unless otherwise noted) symbol rating value unit v r reverse voltage 30 v thermal characteristics symbol characteristic max unit p d total device dissipation fr5 board,* t a = 25 c derate above 25 c 200 1.57 mw mw/ c r ja thermal resistance junction to ambient 635 c/w t j , t stg junction and storage temperature 150 c *fr4 minimum pad 1 c a thode 2 anode ? low forward v oltage : 0.35 v olts ( t yp) @ i f = 10 madc features case: sod-323, molded plastic polarity: see diagrams below mechanical data low turn-on voltage extremely fast switching speed pn junction guard ring for transient and esd protection 1 2 ? shipping : 3000 / tape & reel ? mounting position : any notes: 1 . dimensionin g and t olerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. dim min max min max inchesmillimeters a 1.60 1.80 0.063 0.071 b 1.15 1.35 0.045 0.053 c 0.80 1.00 0.031 0.039 d 0.25 0.40 0.010 0.016 e 0.15 ref 0.006 ref h 0.00 0.10 0.000 0.004 j 0.089 0.177 0.0035 0.0070 k 2.30 2.70 0.091 0.106 pin 1. cathode 2. anode note 3 a k 1 2 d b e h c j p ackag e dimensions sod323 plastic p ackage electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m a) v (br)r 30 e e volts total capacitance (v r = 1.0 v, f = 1.0 mhz) c t e 7.6 10 pf reverse leakage (v r = 25 v) i r e 0.5 2.0 m adc forward voltage (i f = 0.1 madc) v f e 0.22 0.24 vdc forward voltage (i f = 30 madc) v f e 0.41 0.5 vdc forward voltage (i f = 100 madc) v f e 0.52 1.0 vdc reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc) figure 1 t rr e e 5.0 ns forward voltage (i f = 1.0 madc) v f e 0.29 0.32 vdc forward voltage (i f = 10 madc) v f e 0.35 0.40 vdc forward current (dc) i f e e 200 madc repetitive peak forward current i frm e e 300 madc nonrepetitive peak forward current (t < 1.0 s) i fsm e e 600 madc b a t 5 4 h m a r k i n g : j l 4 v , p h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e 0 1 - j u n - 2 0 0 5 rev. b p a g e 1 o f 2 r o h s c o m p l i a n t p r o d u c t a s u f f i x o f " - c " s p e c i f i e s h a l o g e n & l e a d - f r e e
any changing of specification will not be informed individual BAT54H 30 volt silicon hot-carrier detector surface mount schottky barrier diode notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w o utput p ulse gener a t or 50 w input s ampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec ) = 1 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1 ma) i f input signal figure 1. recovery t ime equivalent t est circuit 100 0.0 0.1 v f , f orward voltage (v) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 c 10 0 v r , reverse voltage (v) 1.0 0.1 0.01 0.001 5101520 25 14 0 v r , reverse volt age (v) 12 4 2 0 c t , total capacitance (pf) 51015 30 i f , f orward current (ma) figure 2. forward v oltag e figure 3. leakage current figure 4. t otal capacitance 40 c 25 c t a = 150 c t a = 125 c t a = 85 c t a = 25 c i r , r everse current ( m a) 0.6 5 5 c 150 c 125 c 100 1000 30 2520 6 8 10 http://www.secosgmbh.com ele k troni sche bauelemente 01 -jun-2005 rev. b page 2 of 2
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